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Conferences > CLEO > 2007 > CMD > CMD2
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CMD2

Ground State Lasing at 1.340 µm from InAs Quantum Dots Grown on GaAs Substrate by Antimony-Mediated Metal Organic Chemical Vapor Deposition

D. Guimard, M. Ishida, M. Nishioka, S. Tsukamoto, N. Hatori, H. Sudo, T. Yamamoto, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa

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Abstract

Ground state lasing above 1.30 µm (1.34 µm) was obtained for the first time from InAs quantum dots grown on GaAs substrate by metal organic chemical vapor deposition.

© 2007 Optical Society of America

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