Abstract
We report a semiconducting polymer light emitting field-effect transistor (LEFET) fabricated by employing a new “angled” evaporation technique to deposit the two electrodes (Ag for hole injection and Ca for electron injection). Under ambipolar conditions, recombination of electrons and holes resulted in the observation of a narrow zone of light emission within the channel. The emission zone moved across the channel as the gate bias was swept during collection of the transfer data.
© 2006 Optical Society of America
PDF ArticleMore Like This
Francesco Maddalena, Xin Yu Chin, Daniele Cortecchia, Annalisa Bruno, and Cesare Soci
JSV_1_2 European Quantum Electronics Conference (EQEC) 2017
Xin Yu Chin, Daniele Cortecchia, Jun Yin, Annalisa Bruno, and Cesare Soci
CE_12_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2015
Changtao Hou, Wenjun Xu, Hang Zhou, and Zhaoyu Zhang
Su4G.3 Asia Communications and Photonics Conference (ACP) 2017