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Conferences > CLEO > 2006 > CThX > CThX6
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CThX6

High Characteristic Temperature of p-doped InAs Quantum Dots-in-a-Well Lasers on InP Substrate

Y. Li, T. J. Rotter, Y. C. Xin, A. Stinz, A. Martinez, K. J. Malloy, S. Patterson, and L. F. Lester

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Abstract

The p-doped quantum dots-in-a-well (DWELL) lasers emitting at 1.44 μm on InP (001) substrates are demonstrated. The characteristic temperature is 210K in the room temperature range.

© 2006 Optical Society of America

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