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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CThD3

Novel CMOS compatible cavity enhanced Ge/SOI photodetector based on secondary photoconductivity

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Abstract

An integrated Ge-on-SOI photo-detector based on secondary photo-conductivity is proposed and demonstrated. A 1mW beam at 1.55mm creates charge separation in the Ge thereby changing the resistivity of the underlying Silicon by 〜3%.

© 2006 Optical Society of America

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