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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CMBB6

InGaAsN/GaAsSb/GaAs(P) Type-II ‘W’ Quantum Well Lasers

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Abstract

InGaAsN/GaAsSb ‘W’ type-II strain compensated quantum well lasers on GaAs substrates are grown by MOCVD. Preliminary lasers with 3-stage active regions exhibit emission that is blue-shifted from the PL, due to charge separation and higher-energy transitions.

© 2006 Optical Society of America

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