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Conferences > CLEO > 2006 > CFE > CFE1
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CFE1

1.3 µm InAs quantum dots with high density, uniformity, and quality

T. Amano, T. Sugaya, S. Yamauchi, and K. Komori

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Abstract

We realized a high density, uniformity and quality InAs quantum dot structure at 1.3 µm with for optical devices that employs a dimeric arsenic source and a gradient composition strain reducing layer.

© 2006 Optical Society of America

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