Abstract

We observed over two-fold enhancement in light extraction efficiency from GaN-based light emitters grown on a nano-patterned sapphire substrate. Nano-hole array patterns were generated by laser holography, which enabled a large area process with high throughput.

© 2005 Optical Society of America

PDF Article
More Like This
Extraction Efficiency Improvement of GaN Light-emitting Diode Using Sub-wavelength Nanoimprinted Patterns on Sapphire Substrate

Hao Chen, Chao Wang, and Stephen Y. Chou
CMA2 CLEO: Science and Innovations (CLEO_SI) 2011

Highly Efficient InGaN-Based Light Emitting Devices grown on Nanoscale Patterned Substrates by MOCVD

Chien-Chung Lin, Ching-Hsueh Chiu, H. W. Huang, Shih-Pang Chang, Hao-Chung Kuo, and Chun-Yen Chang
83120C Asia Communications and Photonics Conference and Exhibition (ACP) 2011

Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substrates

Vin-Cent Su, Po-Hsun Chen, Ta-Cheng Hsu, Yu-Yao Lin, and Chieh-Hsiung Kuan
AM2B.5 CLEO: Applications and Technology (CLEO_AT) 2017

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription