Abstract
Professor Nakamura will present current research on GaN-based emitting devices and crystal growth. He will explain how a high-quality thick A, M-plain GaN epitaxial growth using a lateral epitaxial overgrowth (LEO) by hydride vapor phase epitaxy (HVPE) was achieved. Attendees will learn about challenges for new device structures such as micro cavity light-emitting diodes (MC-LED), cone-shaped surface LEDs and others. Full-text article is not available.
© 2005 Optical Society of America
More Like This
Hiroshi Amano
JTu3A.2 CLEO: Applications and Technology (CLEO:A&T) 2015
Shuji Nakamura
JM1A.1 Fourier Transform Spectroscopy (FTS) 2016
T. Y. Fan, D. J. Ripin, J. D. Hybl, J. T. Gopinath, A. K. Goyal, D. A. Rand, S. J. Augst, and J. R. Ochoa
CA3_5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2009