Photoelectrochemical Oxidation Enhances Optical Output Power in GaN-based Light Emitting Diodes

Chia-Feng Lin; Zhong-Jie Yang; Jing-Hui Zheng

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2005),
paper CMI6

Photoelectrochemical Oxidation Enhances Optical Output Power in GaN-based Light Emitting Diodes

Chia-Feng Lin, Zhong-Jie Yang, and Jing-Hui Zheng

Conference on Lasers and Electro-Optics 2005

Baltimore, Maryland United States
22–27 May 2005
ISBN: 1-55752-770-9

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Solid-State Lighting and Group III-Nitride LEDs (CMI)

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C. Lin, Z. Yang, and J. Zheng, "Photoelectrochemical Oxidation Enhances Optical Output Power in GaN-based Light Emitting Diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2005), paper CMI6.

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Abstract

Using the photoelectrochemical (PEC) oxidation process, the output power was increased by about 40%, caused by a reduced index reflectance from the GaN material to the outside air, and an increased roughness in the oxidized sidewalls. In addition, the enhanced output power was decreased when the PEC oxidation time was increased. These PEC treated InGaN/GaN MQW LEDs are suitable for all Nitride-based LED lighting applications.

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