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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CMI4

UVLED based on carrier localization in AlGaN

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Abstract

AlGaN samples show intense room temperature photoluminescence from localized statesthat is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light- emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.

© 2005 Optical Society of America

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