Abstract

Until a few years ago, wavelength ranges for semiconductor lasers based on the two main substrates have been clearly separated: GaAs- based lasers covered the wavelength range between about 750 nm and 1100 nm, whereas InP-based lasers are used for telecom applications around 1.3 µm and 1.55 µm. The different wavelengths ranges covered by these materials originated from the availability of active and barrier materials with good lattice matching with the respective substrates.

© 2004 Optical Society of America