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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CWA43

GaNAs/GaAsSb type II active regions for 1.3−1.5µm operation

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Abstract

We investigated a new active material consisting of GaNAs/GaAsSb type II quantum wells on GaAs for 1.3-1.5µm wavelength operation. Absorption spectra of two samples with different compositions were measured, showing good agreement with simulation.

© 2004 Optical Society of America

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