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Conferences > CLEO > 2004 > CTuP > CTuP16
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuP16

Characteristics of 1.3 μm AlGalnAs-based multiple quantum well tunnel injection lasers

J.-Y. Kim, S. Park, S. R. Hwang, J. K. Kang, E. H. Lee, J. K. Lee, D. H. Jang, and T. I. Kim

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Abstract

1.3 μm AlGalnAs-based multiple quantum well tunnel injection lasers have been fabricated for the first time for high speed and uncooled operation. By introducing the tunnel barrier, we have improved a frequency bandwidth and a damping rate, while the low frequency roll-off is increased by increasing a diffusion capacitance.

© 2004 Optical Society of America

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