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Conferences > CLEO > 2004 > CTuJ > CTuJ5
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuJ5

The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers

S. R. Bank, L.L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris

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Abstract

The temperature behavior of 1.5 μm GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures.

© 2004 Optical Society of America

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