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Conferences > CLEO > 2004 > CTuJ > CTuJ1
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuJ1

Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (λ=1.2 -1.3µm) lasers

O. Anton, D. Patel, C.S. Menoni, Jeng-Ya Yeh, L. Mawst, J.M. Pikal, and Nelson Tansu

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Abstract

We show for the first time that the differential carrier lifetime (τd) of identical In0.4Ga0.6As/GaAs0.85P0.15/GaAs single QW broad area lasers with and without the addition of nitrogen (λ=1.2-1.3µm) significantly reduces with the incorporation of nitrogen.

© 2004 Optical Society of America

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