Abstract

We demonstrate a GaAs based OPO. The singly-resonant, pulsed OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal. By tuning either near-IR pump wavelength or OP-GaAs temperature, we achieved broad tunability between 2 and 10 microns.

© 2004 Optical Society of America

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