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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CThD3

Effects of Wavelength and Doping Concentration on Silicon Damage Threshold

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Abstract

Our damage experiment shows threshold fluence doesn’t decrease with increasing doping concentration and its dependence on wavelength is weak, with photon energies above or below bandgap. Our results indicate impact ionization is the dominating mechanism.

© 2004 Optical Society of America

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