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Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CWA13

Temperature dependent visible photoluminescence of Eu-doped GaN on Silicon

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Abstract

A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies.

© 2003 Optical Society of America

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