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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CTuM39

1.64 µm emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers

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Abstract

We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state photoluminescence at wavelengths >1.6µm is observed along with first-excited state lasing at λ~1.34 µm.

© 2003 Optical Society of America

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