Abstract

Electroabsorption modulators (EAMs) can be easily integrated with other optical component such as semiconductor lasers, semiconductor optical amplifiers, and attenuators [1]. Since material properties, such as bandgap, refractive index and thermal conductivity, change with temperature, internal heating must be considered in the design of high power EAMs. The input power tolerance of InGaAsP EAMs has been investigated experimentally, revealing that optical power for breakdown depends on bias voltage and operating wavelength [2]. In this paper we characterize temperature distribution in an electroabsorption modulator. A self-consistent opto-electro-thermal model is developed that accurately predicts thermal runaway in unoptimized EAM structures. Optimized structures with improvedthermal design achieve high power operation with a record damage free power dissipation level in excess of 300mW.

© 2003 Optical Society of America