Asymmetric group IV MSM photodetectors with reduced dark currents

Ali K. Okyay; Chi On Chui; Krishna C. Saraswat

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Technical Digest (Optica Publishing Group, 2003),
paper CTuD4

Asymmetric group IV MSM photodetectors with reduced dark currents

Ali K. Okyay, Chi On Chui, and Krishna C. Saraswat

Conference on Lasers and Electro-Optics 2003

Baltimore, Maryland United States
1–6 June 2003
ISBN: 1-55752-733-4

From the session
Photodetectors and Pre-amplifiers (CTuD)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
A. K. Okyay, C. O. Chui, and K. C. Saraswat, "Asymmetric group IV MSM photodetectors with reduced dark currents," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference, Technical Digest (Optica Publishing Group, 2003), paper CTuD4.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

Effective dark current suppression in metal-semiconductor-metal photodetectors (MSM-PD) using asymmetric metal electrodes is demonstrated. Improved signal-to-noise ratios normalized to input optical power (NSNR) as high as ~800mW⁻¹ is achieved for Ge MSMs.

PDF Article

More Like This

A Novel Semiconductor-on-Metal MSM Photodetector Design for Dark Current Reduction

S. Mirbaha, R. N. Tait, S. P. McGarry, and N. G. Tarr
JTuB15 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2010

High-efficiency inverted MSM photodetectors

Olivier Vendier, Nan Marie Jokerst, and Richard P. Leavitt
CWD1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Very Low Dark Current InGaAs MSM-PD with DoubleSchottky Barrier Enhancement Layers

H.-W. Zhu, C.-X. Shi, and Y.-X. Chen
19A1.5 Optoelectronics and Communications Conference (OECC) 1996

Previous Article Next Article