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Conferences > CLEO > 2003 > CMX > CMX3
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CMX3

Current status on GaN-based light emitting devices

S. Iwayama, H. Kato, S. Yamasaki, Y. Tezen, J. Minoura, S. Nagai, M. Asai, H. Watanabe, A. Kojima, N. Arazoe, R. Nakamura, T. Hatano, M. Koike, K. Tomita, and T. Kachi

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Abstract

The GaN-based laser diodes have been improved by reducing the dislocation density, smoothing the LD’s mirror facets and promoting thermal dissipation. The threshold current has been reduced to 40mA. The output power up to 200mW was obtained High quality freestanding GaN substrates were realized.

© 2003 Optical Society of America

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