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Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CMQ4

GaN-based laser diodes with low-threshold current fabricated directly on masked sapphire substrate

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Abstract

Practical GaN-based laser diodes have been realized, for the first time, by using a novel selective growth technique on a sapphire substrate. The threshold current is as low as 50 mA or less.

© 2003 Optical Society of America

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