Progress in type-I In(Al)GaAsSb/GaSb diode lasers with λ &gt; 2.5μm

L. Shterengas; J.G. Kim; G. Belenky; R. Martinelli

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Technical Digest (Optica Publishing Group, 2003),
paper CMJ1

Progress in type-I In(Al)GaAsSb/GaSb diode lasers with λ > 2.5μm

L. Shterengas, J.G. Kim, G. Belenky, and R. Martinelli

Conference on Lasers and Electro-Optics 2003

Baltimore, Maryland United States
1–6 June 2003
ISBN: 1-55752-733-4

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Mid-IR II (CMJ)

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L. Shterengas, J. G. Kim, G. Belenky, and R. Martinelli, "Progress in type-I In(Al)GaAsSb/GaSb diode lasers with λ > 2.5μm," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference, Technical Digest (Optica Publishing Group, 2003), paper CMJ1.

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Abstract

Type-I InGaAsSb QW λ= 2.8μm diode lasers were developed. They output 40mW CW at 20⁰C and more than 1W peak power Room temperature photoluminescence with λ_peak > 3μm was measured from similar laser structures.

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