Abstract
Nanoscaled structures play a major role in optoelectronic and semiconductor research with many applications already in a commercial state. Today’s Si nanocrystals research is focused on the preparation of Si nanocrystals embedded in an oxide host. Methods applied for preparation are Si ion implantation into high quality oxides, sputtering of Si rich oxides or reactive evaporation of Si rich oxides. Using these methods the Si crystal size is controlled by the Si content in the SiO2 matrix. Crystal size and number cannot be controlled independently. In addition, there is only a limited control of the size distribution.
© 2002 Optical Society of America
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