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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CWD4

Longitudinal Spatial Hole Burning in a Gain Clamped Semiconductor Optical Amplifier

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Abstract

A microscope objective mounted on a computerized two-axis translation stage allows us to measure Spontaneous Emission (SE) spectra1 along the InGaAsP active layer of a Gain clamped Semiconductor optical Amplifier (GC-SOA) with a 1510 nm internal lasing mode selected by two DBRs of different reflectivity (1 % and 98%).

© 2002 Optical Society of America

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