Abstract

Evaluation of fast semiconductor devices requires both high temporal resolution and the ability to probe internal points of an IC noninvasively. While optical methods are suitable for this application, centrosymmetric semiconductors such as silicon and germanium require an externa] electro-optic probe placed within the fringe electric field flux lines of the region of interest, reducing sensitivity and adding parasitic capacitance to the probed circuit. In this work, we apply Electric Field Induced Second Harmonic Generation (EFISHG) to the measurement of voltage waveforms in the active region of GaN semiconductor devices without the use of any external electrooptic probe.

© 2002 Optical Society of America