Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CThO51

Pulsed 100-mW Operation at 70°C of Small-aspect-ratio 660-nm AIGalnP Laser Diodes with a New Shape of Ridge Stripe

Not Accessible

Your library or personal account may give you access

Abstract

High-power 660-nm AlGalnP laser diodes with a stable transverse mode are indispensable as light sources for recordable or rewritable DVD systems. High-speed recording is strongly required in these systems. The laser beam intensity focused on the optical disc must be increased to meet this requirement. A small aspect ratio for the beam divergence as well as high-power operation of 660-nm laser diodes is indispensable in order to achieve this.

© 2002 Optical Society of America

PDF Article
More Like This
Reduction in the operating current of high-power 660-nm AIGalnP laser diodes with an AllnP current blocking layer

R. Hiroyama, D. Inoue, Y. Nomura, M. Shono, and M. Sawada
CMQ6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001

High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer

R. Hiroyama, T. Nishida, T. Uetani, Y. Bessho, M. Shono, M. Sawada, and A. Ibaraki
CThF1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997

High power and small aspect ratio 980 nm ridge waveguide laser diodes consisted of asymmetrically expanded optical field normal to the active layer

Kimio Shigihara, Kazushige Kawasaki, Yasuaki Yoshida, Shin’ichi Yamamura, Tetsuya Yagi, and Etsuji Omura
ThGG74 Optical Fiber Communication Conference (OFC) 2002

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.