Abstract
The reduction of critical dimension (CD) of semiconductor IC's allows for higher speed of microprocessors as well as higher storage densities of memory chips. The structure sizes of the elementary logic devices are expected to shrink to 35 nm by the end of this decade. Extending deep ultraviolet micro-lithography into the extreme ultraviolet (EUV) using wavelengths around 13.5 nm is the most promising approach to meet the demands of semiconductor chip manufacturing from the year 2007 on and beyond. High throughput of EUV exposure tools of >80 wafers per hour requires bright radiation sources at 13.5 nm with average power well above 100 W.1
© 2002 Optical Society of America
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