Abstract

Laser materials have been developed for various wavelengths (near infrared, visible, UV) and power regimes (mW to multi-kW). Special geometries of the active material (microchip, rod, disc, fiber) strongly correlate with the active ion concentrations and cross sections of absorption and gain transitions. In the near infrared spectral region high efficiencies have been achieved with diode pumped oxide and fluoride laser crystals doped with rare earth ions Nd(sup)3+, Tm(sup)3+, Ho(sup)3+, Er(sup)3+, and Yb(sup)3+. For high average power operation Nd(sup)3+- and Yb(sup)3+-doped crystals are of highest interest.

© 2002 Optical Society of America