Abstract

Materials with ultrafast response times and high optical nonlinearities are crucial for future Tbit/s fiber-based communication systems. One possibility to achieve ultrafast response times is using defect-rich bulk and low-dimensional 111/V materials, which can be realized by molecular beam epitaxy (MBE) at low growth temperatures (LT). In contrast to well-established LT GaAs/AlAs, the absorption edge of LT GalnAs/ AllnAs MQWs can be tuned to the crucial 1.55-µm wavelength. Whereas in LT-GaAs:Be response times are as short as I 00 fs, 1 up to now the optical response of Be-doped LT GalnAs/AllnAs MQWs was much slower.2 In this work, we report for the first time an ultrafast absorption recovery time in LT-Ga inAs/ AllnAs MQWs of only 230 fs at the communication wavelength of 1.55 µm.

© 2002 Optical Society of America

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