Abstract

GaN-based semiconductors have potential applications for optoelectronic devices in the UV-blue wavelength regions and electronic devices capable of operation at high-temperature and highpower conditions. There are great efforts devoted to improve the hole properties in p-type GaN.^1,2 Presently, p-type GaN doping is achieved mostly with Mg impurities. Defect-related transitions in GaN:Mg will strongly affect its hole behaviors in p-type GaN and are crucial for high-performance device applications. Here we report our investigation on the hole capture time into shallow Mg-re- lated impurities. Ultrashort capture time constants of 10-80 ps depending on Mg doping concentration and excess hole energy are determined.

© 2002 Optical Society of America