Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2002 > CFG > CFG3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CFG3

Spectroscopic Evaluation of Rare Earth Doped GaN for Full-color Display Applications

Ei Ei Nyein, U. Hömmerich, J. Heikenfeld, D.S. Lee, A.J. Steckl, and J.M. Zavada

Not Accessible

Your library or personal account may give you access

Abstract

Rare earth doped semiconductors have been studies for more than a decade because of the possibility to develop compact and efficient electroluminescence devices.1,2 Previous work has mainly focused on the infrared (1.54 μm) emission from Er3+ ions in III-V’s and Si based materials for applications in optical communications. The recent observation of visible emission from RE doped GaN has spurred interest in this class of materials for applications in phosphor technology.3,4

© 2002 Optical Society of America

PDF Article
More Like This
Near IR and visible photoluminescence from Er doped III-nitride semiconductors

Myo Thaik, J. T. Seo, U. Hömmerich, C. R. Abernathy, S. J. Pearton, J. D. MacKenzie, R. G. Wilson, and J. M. Zavada
CThK38 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Relaxation Dynamics in Rare Earth-Doped GaN

H. Y. Peng, H. O. Everitt, C. Munasinghe, D. S. Lee, and A. J. Steckl
FTuF2 Frontiers in Optics (FiO) 2005

Rare Earth doped GaN for photonic devices

V. X. Ho, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh
ITh2C.5 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2017

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use