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Conferences > CLEO > 2001 > CWI > CWI4
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CWI4

Ultrafast recovery times in implanted semiconductor saturable absorber mirrors at 1.5 μm

J. T. Gopinath, E. R. Thoen, E. M. Koontz, M. E. Grein, L. A. Kolodziejski, E. P. Ippen, and J. P. Donnelly

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Abstract

Recovery times as short as ~1 ps are obtained with proton bombardment of InGaAs/lnP-based saturable absorbers without significantly changing the non-saturable loss. Under high excitation, recovery is found to be limited by slower intraband relaxation rates.

© 2001 Optical Society of America

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