The effect of Mg diffusion on the contact resistance of low doped p-GaN

C.C. Chen; J.L. Yen; Y.J. Yang

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2001),
paper CTuW6

The effect of Mg diffusion on the contact resistance of low doped p-GaN

C.C. Chen, J.L. Yen, and Y.J. Yang

Conference on Lasers and Electro-Optics 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-662-1

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Nitride Quantum Wells and Nanostructures (CTuW)

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C. C. Chen, J. L. Yen, and Y. J. Yang, "The effect of Mg diffusion on the contact resistance of low doped p-GaN," in Conference on Lasers and Electro-Optics, J. Kafka, K. Vahala, R. Williamson, and A. Willner, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper CTuW6.

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Abstract

In recent years Ill-nitride semiconductors have been studied intensively due to its important applications of the short-wavelength optoelectronics and electronics.

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