Low-threshold optically pumped IV-VI quantum well vertical-cavity surface- emitting laser operating at λ = 4.45 µm

Z. Shi; H. Z. Wu; S. Khosravani; G. Xu; W. W. Bewley; W. W. Bewley; C. L. Felix; C. L. Felix; I. Vurgaftman; I. Vurgaftman; J. R. Lincile; J. R. Lincile; J. R. Meyer; J. R. Meyer

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2001),
paper CTuH4

Low-threshold optically pumped IV-VI quantum well vertical-cavity surface- emitting laser operating at λ = 4.45 µm

Z. Shi, H. Z. Wu, S. Khosravani, G. Xu, W. W. Bewley, C. L. Felix, I. Vurgaftman, J. R. Lincile, and J. R. Meyer

Conference on Lasers and Electro-Optics 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-662-1

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Long Wavelength VCSELS (CTuH)

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Z. Shi, H. Z. Wu, S. Khosravani, G. Xu, W. W. Bewley, C. L. Felix, I. Vurgaftman, J. R. Lincile, and J. R. Meyer, "Low-threshold optically pumped IV-VI quantum well vertical-cavity surface- emitting laser operating at λ = 4.45 µm," in Conference on Lasers and Electro-Optics, J. Kafka, K. Vahala, R. Williamson, and A. Willner, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper CTuH4.

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Abstract

While substantial advances have been made in the development of edge emitting mid-infrared semiconductor lasers in a number of material systems e.g., III-V interband lasers, quantum cascade lasers (QCL), and IV-VI (lead-salt) lasers, there has been little progress until recently in the development of mid-IR vertical-cavity surface-emitting lasers (VCSELs).

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