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Conferences > CLEO > 2001 > CThL > CThL69
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CThL69

Improvement of optical and electronic properties in broken gap mid-wave infrared laser materials

Z. Mi, E.M. Shaw, T.C. Hasenberg, L. Zhang, K. Gundogdu, T.F. Boggess, J. Steinshnider, and M. Weimer

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Abstract

Midwave Infrared (MWIR) laser materials based on InAs Ga(In)Sb broken-gap superlattices (SLs) and quantum wells have been attractive due to their potential superior performance. Molecular beam epitaxy (MBE) growth of these materials, however, has been challenging because intermixing mechanisms can occur at the interfaces due to the non-common atom nature of lnAs/Ga(ln)Sb structures. These mechanisms include cross incorporation, segregation, and exchange.1,2

© 2001 Optical Society of America

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