Abstract

Since the invention of mid-infrared (MIR) semiconductor lasers based on inlersubband electron transitions,1 the ultrafast characteristics of such devices are gaining substantial research interest3.5 due to their intrinsic advantages such as high operation speeds and strong optical non linearities. Following the considerable improvement in the performance of CW and quasi-CW MIR lasers, the operation of a gain-switched MIR intersubband semiconductor laser for short pulse production has been reported recently.1

© 2001 Optical Society of America

PDF Article
More Like This
AMPLIFICATION OF STRONG PICOSECOND OPTICAL PULSES IN SEMICONDUCTOR OPTICAL AMPLIFIERS

J.M. Tang and K.A. Shore
IWA3 Integrated Photonics Research (IPR) 1998

Frequency Shifting of Four-Wave Mixing of Picosecond Optical Pulses in Semiconductor Optical Amplifiers

J. M. Tang and K. A. Shore
109 Advanced Semiconductor Lasers and Their Applications (ASLA) 1999

Picosecond Pulse Amplification in Semiconductor Optical Amplifiers: A Multiple-scale Analysis

Malin Premaratne and Govind P. Agrawal
CThB7 Conference on Lasers and Electro-Optics (CLEO) 2008

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription