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Conferences > CLEO > 2001 > CMQ > CMQ5
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CMQ5

AIGalnN high power lasers

Tsuyoshi Tojyo, Satoru Kijima, Shiro Uchida, and Masao Ikeda

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Abstract

AlGaInN high power laser diodes (LDs) was fabricated on a thin epitaxially laterally overgrown GaN (ELO-GaN) substrate. The characteristics of LDs were improved by using ELO-GaN substrate. This is because ELO-GaN is quite effective to reduce dislocation density and to form good cleaved facets.

© 2001 Optical Society of America

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