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Conferences > CLEO > 2000 > CTuA > CTuA51
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CTuA51

Differential gain in 1.3-µm InGaAsP/lnP MQW lasers with p-doped active region

L. Shterengas, C.L. Reynolds, G. Belenky, M. Hybertsen, D. Donetsky, and G. Shtengel

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Abstract

We measured the temperature dependence of differential gain of 1.3-µm InGaAsP/lnP MQW FP and DFB lasers with the same design1 and two different doping profiles: moderately (2 • 1017 cm−3) and heavily [2 • 1018 cm−3) Zn doped active region.

© 2000 Optical Society of America

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