Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CMM5

Carrier capture in type-II quantum wells for optically pumped mid-infrared lasers

Not Accessible

Your library or personal account may give you access

Abstract

Type-II InAs/GalnSb quantum structures are attractive as the active regions in mid-infrared lasers, because they can be grown with bandgaps throughout the mid-infrared, engineered with suppressed Auger recombination and intersubband absorption, and grown lattice-matched to GaSb substrates.

© 2000 Optical Society of America

PDF Article
More Like This
Mid-infrared laser diode active region based on type-II broken gap quantum wells

J.T. Olesberg, M.E. Flatté, P.S. Day, E.M. Shaw, D.J. Magarrell, L. Zhang, S.A. Anson, T.C. Hasenberg, T.F. Boggess, and C.H. Grein
CThE6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Optically-and electrically-pumped type-II "W" quantum-well lasers for the mid-IR

J. R. Meyer, W. W. Bewley, I. Vurgaftman, C. L. Felix, L. J. Olafsen, D. W. Stokes, M. J. Yang, H. Lee, R. J. Menna, R. U. Martinelli, D. Z. Garbuzov, J. C. Connolly, M. Maiorov, A. R. Sugg, and G. H. Olsen
CMM3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Carrier capture fn 1.3 µm inAsP/lnGaAsP quantum well laser structures

R. Slaby, G. Vaschenko, C.S. Menoni, G.Y. Robinson, J.M. Pikal, and C.M. Sotomayor Torres
CTuA54 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.