Temperature dependence of lasing characteristics for 1.3 µm GaAs-based quantum dot lasers

D. L. Huffaker; O. Shchekin; G. Park; Z. Z. Zou; D. G. Deppe

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper JFA4

Temperature dependence of lasing characteristics for 1.3 µm GaAs-based quantum dot lasers

D. L. Huffaker, O. Shchekin, G. Park, Z. Z. Zou, and D. G. Deppe

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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Active Photonic Crystals and Microstructures (JFA)

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D. L. Huffaker, O. Shchekin, G. Park, Z. Z. Zou, and D. G. Deppe, "Temperature dependence of lasing characteristics for 1.3 µm GaAs-based quantum dot lasers," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper JFA4.

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Abstract

Recently ground-state 1.3 µm wavelength lading has been demonstrated at room temperature from GaAs-based uncoated heterostructure lasers using an InGaAsquan turn dot (QD) active region.¹

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