Luminescence from erbium ion implanted As2S3 planar waveguides

Jochen Fick; Émile J. Knystautas; Alain Villeneuve; Sjoerd Roorda

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CWF54

Luminescence from erbium ion implanted As₂S₃ planar waveguides

Jochen Fick, Émile J. Knystautas, Alain Villeneuve, and Sjoerd Roorda

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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J. Fick, É. J. Knystautas, A. Villeneuve, and S. Roorda, "Luminescence from erbium ion implanted As2S3 planar waveguides," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CWF54.

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Abstract

A 400 nm thick film of As₂S, was thermally evaporated onto a Si/SiO₂ waver at an evaporation rate of 2.5 nm/s and a pressure of 3.10⁻⁷ Torr. The deposition was followed by a heat treatment at 165°C for 2 hours. The refractive index of the film at 980 nm was 2.5.

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