Abstract

A 400 nm thick film of As2S, was thermally evaporated onto a Si/SiO2 waver at an evaporation rate of 2.5 nm/s and a pressure of 3.10−7 Torr. The deposition was followed by a heat treatment at 165°C for 2 hours. The refractive index of the film at 980 nm was 2.5.

© 1999 Optical Society of America

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