Abstract

The effect of carrier induced refractive index change in semiconductor lasers has been studied extensively in the past decade.1,2 Owing to the plasma effect, a region that is highly populated with charged carriers experiences a lowering of its refractive index. It is known that when the carrier density in the active region is increased by 1018 cm−3, the refractive index can be depressed by an order of 10−3 In this report we describe the use of this mechanism to achieve horizontal confinement in a planar GaAs/AlGaAs slab waveguide.

© 1999 Optical Society of America

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