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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CTuU3

Determination of electron-hole transport In InGaN QW heterostructures by nearfield optical microscopy

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Abstract

All-optical methods can be very useful for transport measurements of excess carriers in semiconductor structures. Application of these methods becomes problematic, however, when diffusion lengths become shorter than the light wavelength.

© 1999 Optical Society of America

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