Abstract
Recent progress in the epitaxial growth and device process on wide bandgap III-V nitrides have made possible the indium gallium nitride (InGaN) quantum well (QW) emitters spanning the spectral range from amber to violet.1
© 1999 Optical Society of America
PDF ArticleMore Like This
Arto V. Nurmikko and Y.-K. Song
168 Advanced Semiconductor Lasers and Their Applications (ASLA) 1999
G.B. Ren and P. Blood
CTuO2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999
L. -H. Peng, K. -T. Hsu, C. -W. Shih, C. -C. Chuo, and J. -I. Chyi
CThL57 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001