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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CTuK52

Novel technique for evaluation of optical confinement in semiconductor lasing structures through spatially and spectrally resolved emission spectra

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Abstract

At present, the main focus of III-V nitride research is the optimization of current-injected laser diodes1 in order to achieve a low lasing threshold and extend the lifetime of working devices.

© 1999 Optical Society of America

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