Epitaxially-stacked multiple-active-region 1.55 μm lasers for increased efficiency

J. K. Kim; E. Hall; J. Getty; L. A. Coldren

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CTuK43

Epitaxially-stacked multiple-active-region 1.55 μm lasers for increased efficiency

J. K. Kim, E. Hall, J. Getty, and L. A. Coldren

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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J. K. Kim, E. Hall, J. Getty, and L. A. Coldren, "Epitaxially-stacked multiple-active-region 1.55 μm lasers for increased efficiency," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CTuK43.

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Abstract

Semiconductor lasers with optical efficiencies > 1 have been created by monolithically connecting several active regions in series within a single optical waveguide.

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