Abstract
Compound III-V semiconductors, such as GaAs and GaP have high nonlinear coefficient d 36 of the order of 100 pm/V or more,1 but, unfortunately, these materials are not widely used for nonlinear frequency conversion since they are neither birefringent nor ferroelectric, i.e. III-V materials cannot be phasematched by the angle tuning while the quasi-phasematching (QPM) can be achieved only by a complicated process of wafer bonding followed by overgrowth.
© 1999 Optical Society of America
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