High power reliable 1.9 μm GaInAsP/ InP laser diode arrays

X. He; D. Xu; A. Ovtchinnikov; F. Malarayap; R. Supe; S. Wilson; R. Patel

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CThE7

High power reliable 1.9 μm GaInAsP/ InP laser diode arrays

X. He, D. Xu, A. Ovtchinnikov, F. Malarayap, R. Supe, S. Wilson, and R. Patel

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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Mid-Infrared Lasers (CThE)

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X. He, D. Xu, A. Ovtchinnikov, F. Malarayap, R. Supe, S. Wilson, and R. Patel, "High power reliable 1.9 μm GaInAsP/ InP laser diode arrays," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CThE7.

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Abstract

High power monolithic laser diode arrays lasing at 1.9 μm are important optical sources for pumping, medical uses and “eye-safe” illumination.

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